The lasers group is focused on advancing short wave infrared (SWIR) InP-based edge-emitting laser diodes within traditional optical communication bands like the O-Band (1310 nm) and C-Band (1550 nm), as well as alternative ranges such as the S-Band and L-Band. The main areas of focus include optical telecommunications, data communications, and sensor technology. This research aims to innovate new device structures, enhance device performance, and minimize costs associated with processing, testing, and eventual packaging. Active layers include Bulk-InGaAsP, QW-InGaAsP, QW-InGaAlAs combinations, and more recently, quantum dot (QD) structures.
Our ongoing research, development, design, and fabrication efforts include the following areas:
- EMLs for 28 to 200 Gb/s direct modulation
- DFB lasers for 28 to 100 Gb/s direct modulation
- High power single mode DFB lasers up to 200 mW
- High power Broad Area (BA) FP lasers with 5 W continuous wave (CW) optical power
- Gain Chips for external cavity lasers
- Semiconductor Optical Amplifier (SOA) for low noise and high power amplification
- InP devices for integration with Si, SiN, LNOI, and Polymer PICs using flip-chip hybrid integration or micro-transfer printing
- Mode Locked Lasers (MLL) as wavelength comb and pulse sources
All devices are entirely fabricated at HHI using our InP processing line. We utilize an automatic bar measurement system for characterization and chip selection. Mounted devices can be evaluated based on all relevant laser parameters, such as output power, optical far-field, modal gain, optical losses, relative intensity noise (RIN), frequency response, chirp, phase noise, and linewidth.
