PoLiSiQ

Concept

The aim of the project is to establish a new type of photonic integration platform based on the heterogeneous integration of lithium niobate (LN) and silicon nitride (Si3N4). For this purpose, established technologies for the production of passive Si3N4 waveguides are combined with the transfer of thin electro-optically active LN films. These material systems are connected (bonded) at wafer level. This combination makes it possible to realize integrated optical function blocks which, depending on extremely low optical losses, very low switching voltages or high switching speeds. This makes this platform predestined for the production of high-performance photonic integrated circuits (PICs) for quantum communication, even outside the range outside the telecom wavelength of 1.5 μm, which is already well covered by InP PICs. The entire processing of the platform takes place at wafer level. This ensures scalability and volume production is possible. The utilization of the globally unique approach of further wafer processing after successful bonding of Si3N4 and LN is to be secured via a patent (in preparation).