Detectors

The detector group develops and manufactures photodetector chips and modules based on its in-house InP-technology according to customer specifications focusing on telecom and sensing applications. Our strengths include high-speed high-power photodetectors with a 3dB-bandwidth up to 150 GHz and low noise high responsivity InGaAs photodiodes. The photodiodes cover the SWIR wavelength range of 780 nm - 2500 nm including the datacom O-band  (1310 nm) and telecom C-band (1550 nm). Besides standard PIN photodiode types also avalanche photodiodes (APD), single photon avalanche detectors (SPAD) and uni-travelling carrier (UTC) are developed and fabricated. The photodetectors comprise besides photodiodes also e.g. optical 90° hybrids for coherent Rx. Packaging the photodetector chips with TIAs into a housing, a variety of photoreceivers can be provided.

• InGaAs and Extended InGaAs Photodiodes (pdf)
• Single Photon Avalanche Diode Module (pdf)
• High-Speed Surface Illuminated Photodiode (pdf)
• 145 GHz Photodetector Module (pdf)
• 100 GHz Photodetector Module (pdf)
• 100 GHz Balanced Photodetector Module (pdf)
• High-Power Photodetector Module (pdf)